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DATA SHEET
MOS FIELD EFFECT POWER TRANSISTOR
PA1700
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of note book computers.
8
PACKAGE DIMENSIONS (in millimeter)
5 1,2,3 ; Source 4 ; Gate 5,6,7,8 ; Drain
FEATURES
* Low On-Resistance RDS(on)1 = 27 m Typ. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 m Typ. (VGS = 4 V, ID = 3.5 A)
1.44
* Low Ciss
Ciss = 850 pF Typ.
1.8 Max
1 5.37 Max
4
6.00.3 4.4 0.8
* Small and Surface Mount Package (Power SOP8)
0.15 +0.10 -0.05
* Built-in G-S Protection Diode
0.05 Min
0.50.2 1.27 0.78 Max 0.12 M 0.10 0.40 +0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
PA1700G
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (TA = 25 C)** Channel Temperature Storage Temperature TCH Tstg 150 -55 to +150 C C VDSS VGDS ID(DC) ID(pulse) PT 30 20 7.0 28 2.0 V V A A W
Gate Protection Diode Source To keep good radiate condition, It is recommended that all pins are soldering to print board. Gate Body Diode
* PW 10 s, Duty Cycle 1 % ** Mounted on ceramic substate of 1200 mm2 x 0.7 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Document No. G10479EJ2V0DS00 (2nd edition) Date Published September 1995 P Printed in Japan
(c)
1995
PA1700
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS TEST CONDITIONS VGS = 10 V, ID = 3.5 A VGS = 4 V, ID = 3.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.5 A VDS = 30 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 3.5 A VGS(on) = 10 V VDD = 15 V RG = 10 ID = 7.0 A VDD = 24 V VGS = 10 V IF = 7.0 A, VGS = 0 IF = 7.0 A, VGS = 0 di/dt = 100 A/s 850 550 270 20 105 90 60 33 2.4 13 0.84 60 90 1.0 5.0 10 10 MIN. TYP. 20 33 1.6 MAX. 27 50 2.0 UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
Test Circuit 1 Switching Time
D.U.T. RL
VGS VGS
Wave Form
Test Circuit 2 Gate Charge
D.U.T. IG = 2 mA PG.
ID 90 % 90 % ID ID
Wave Form
PG.
RG RG = 10
0
10 %
VGS (on)
90 %
RL VDD
VDD
50
VGS 0 t t = 1 s Duty Cycle < 1 % =
0
10 % td (on) ton tr td (off) toff
10 % tf
2
PA1700
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8
PT - Total Power Dissipation - W
Mounted on ceramic substrate of 1200 mm 2 x 0.7 mm
100 80 60 40 20
2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80
0
20
40
60
80
100 120 140 160
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 20
ID - Drain Current - A
FORWARD BIAS SAFE OPERATING AREA 100
d ite ) im 0 V )L 1 on = S S( RD t VG a (
ID(pulse)
Mounted on ceramic substrate of 1200 mm 2 x 0.7 mm
ID - Drain Current - A
VGS = 20 V 16
VGS = 10 V VGS = 4 V
10
ID(DC)
1
10 m s
m
s
Po
we
10
12 8 4
0
1
rD
m
iss
ipa
DC
s
tio
n
Lim
0.1 0.1
TA = 25 C Single Pulse
ite
d
1
10
100
0
0.5 VDS - Drain to Source Voltage - V
1.0
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
ID - Drain Current - A
10
1
TA = -25 C 25 C 125 C
0.1
VDS = 10 V
0
2.0
4.0
6.0
8.0
VGS - Gate to Source Voltage - V
3
PA1700
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-a) = 62.5 C/W
100
10
1
0.1
0.01 0.001 10
Mounted on ceramic substrate of 1200 mm 2 x 0.7 mm Single Pulse
100
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
|yfs| - Forward Transfer Admittance - S
100 TA = -25 C 25 C 75 C 125 C
RDS(on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60
10
40
1
20 ID = 3.5 A
0.1 0.1
1
10
100
0
5
10
15
ID - Drain Current - A
VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 150
VGS(off) - Gate to Source Cutoff Voltage - V
Pulsed
2.0
VDS = 10 V ID = 1 mA
100
1.5
1.0
50 VGS = 4 V
0.5
VGS = 10 V 0 1 10 ID - Drain Current - A 100
0 -50
0
50
100
150
Tch - Channel Temperature - C
4
PA1700
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
ISD - Diode Forward Current - A
100
60
VGS = 4 V
10
10 V
40
VGS = 10 V
1 VGS = 0 0.1 0 0.5 1.0 1.5
20 ID = 3.5 A -50 0 50 100 150
0
Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS 1 000
10 000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 f = 1 MHz
tf 100 td(off)
1 000
Ciss Coss
100
Crss
tr 10
td(on)
10 0.1
1
10
100
1 0.1
VDD = 15 V VGS = 10 V RG = 10 1 10 100 ID - Drain Current - A
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000
trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V
30 VDS 20
100
VDD = 24 V 15 V 6V
12 10 8 VGS 6
10
10
4 2
1 0.1
1
10
100
0
10
20
30
40
ID - Drain Current - A
Qg - Gate Charge - nC
5
VGS - Gate to Source Voltage - V
di/dt = 100 A/ s VGS = 0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 40 ID = 7.0 A 14
PA1700
REFERENCE
Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Power MOS FET features and application switching power supply Application circuits using Power MOS FET Safe operating area of Power MOS FET Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
6
PA1700
[MEMO]
7
PA1700
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
2

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